TLHR4206 vishay semiconductors 1 (5) rev. a1, 05-apr-01 www.vishay.com document number 83163 high efficiency led, 3 mm tinted undiffused package color type technology angle of half intensity high efficiency red TLHR4206 gaasp on gap 22 description the TLHR4206 serie was developed for standard ap- plications like general indicating and lighting purposes. it is housed in a 3 mm tinted clear plastic package. the wide viewing angle of these devices provides a high on-off contrast. several selection types with different luminous intensi- ties are offered. all leds are categorized in luminous intensity groups. the green and yellow leds are cate- gorized additionally in wavelength groups. that allows users to assemble leds with uniform ap- pearance. features choice of five bright colors standard t-1 package small mechanical tolerances suitable for dc and high peak current wide viewing angle luminous intensity categorized yellow and green color categorized 94 8488 applications status lights off / on indicator background illumination readout lights maintenance lights legend light absolute maximum ratings t amb = 25 c, unless otherwise specified TLHR4206 parameter test conditions symbol value unit reverse voltage v r 6 v dc forward current i f 30 ma surge forward current t p 10 s i fsm 1 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 400 k/w
TLHR4206 vishay semiconductors 2 (5) rev. a1, 05-apr-01 www.vishay.com document number 83163 optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( TLHR4206 ) parameter test conditions type symbol min typ max unit luminous intensity 1) i f = 10 ma TLHR4206 i v 16 25 50 mcd dominant wavelength i f = 10 ma d 620 623 628 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma j + 22 deg forward voltage i f = 20 ma v f 2 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf 1) in one packing unit i vmin. /i vmax. 3 0.5 typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( 5 c ) 100 95 10904 figure 1 power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( 5 c ) 100 95 10905 50 figure 2 forward current vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 10047 i forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 65 5 c figure 3 forward current vs. pulse length 0.4 0.2 0 0.2 0.4 0.6 95 10041 0.6 0.9 0.8 0 5 30 5 10 5 20 5 40 5 50 5 60 5 70 5 80 5 0.7 1.0 i relative luminous intensity v rel figure 4 rel. luminous intensity vs. angular displacement
TLHR4206 vishay semiconductors 3 (5) rev. a1, 05-apr-01 www.vishay.com document number 83163 02468 0.1 1 10 100 1000 10 95 10026 v f forward voltage ( v ) i forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s figure 5 forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10027 20 40 60 80 100 i relative luminous intensity v rel t amb ambient temperature ( c ) high efficiency red i f =10ma figure 6 rel. luminous intensity vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10321 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t i relative luminous intensity v rel 2.0 high efficiency red figure 7 rel. lumin. intensity vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10029 i relative luminous intensity v rel high efficiency red figure 8 relative luminous intensity vs. forward current 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 9 relative luminous intensity vs. wavelength
TLHR4206 vishay semiconductors 4 (5) rev. a1, 05-apr-01 www.vishay.com document number 83163 dimensions in mm 95 10913
TLHR4206 vishay semiconductors 5 (5) rev. a1, 05-apr-01 www.vishay.com document number 83163 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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